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TranSiC
In order to meet the demand for improved efficiency and performance in semiconductor applications, Fairchild Semiconductor has announced the acquisition of TranSiC, a Silicon Carbide (SiC) power transistor company, to expand its leading technological capabilities.
This acquisition brings to Fairchild the proven efficiency of industry-leading bipolar SiC transistor technology, outstanding performance over a wide temperature range, and superior performance beyond MOSFET and JFET technology. Fairchild also used this acquisition to acquire an experienced team of SiC engineers and scientists, as well as a number of SiC patents (source: Electronic Engineering).
Mark Thompson, chairman, president, and chief executive officer of Fairchild Semiconductor, said: "They have the strength to combine SiC technology with Fairchild's existing capabilities in MOSFETs, IGBTs and multi-chip modules, and their global customer base. Continue to be a leader in innovative, high performance power transistor technology."
Dan Kinzer, chief technology officer of Fairchild Semiconductor, said: "The high performance level of SiC technology can greatly improve the power conversion efficiency. It also provides a higher conversion speed, can achieve a smaller terminal system form factor. Silicon carbide technology in the market has It has a certain position, especially in the area of wide band gap, it is suitable for applications requiring voltages above 600V, and demonstrates excellent robustness and reliability."
The advantages of SiC technology over other technologies include:
Low on-state voltage drop at a specific chip size
High current density
High operating temperature
Extremely low thermal resistance
·Only majority carrier conduction, with ultra-fast switching speed
·Usually off operation mode with a current gain range of 100 to provide an easy drive solution
Due to the use of positive temperature coefficient resistance components, they can be easily connected in parallel (Source: Electronic Engineering)
In addition, the impedance of this type of device is very close to the theoretical limit of SiC technology, and successfully demonstrated a 50A switch operation at 800V within a turn-on and turn-off time of 25ns. These devices have parametric stability over long-term full-bias current and current stress conditions.
These high-gain SiC bipolar devices are suitable for high power conversion applications in down-drilling, solar inverters, wind power inverters, electrical and hybrid vehicles, industrial drives, UPS, and light rail traction applications. Yole Development, a market research organization, expects these markets will reach a scale of nearly one billion U.S. dollars by 2020.
The device's industry-leading efficiency can reduce the associated losses of mature silicon technology devices by up to 50%, or up to four times in frequency under the same loss conditions. SiC devices have significantly reduced size, fewer passive components, and can reduce overall system cost and increase value. For devices that require the highest efficiency and power density, this device is the unmatched product of choice (Source: Electronic Engineering).
Fairchild is sampling samples of 1200V initial products with a rated current of up to 50A for target applications, and will develop products with a wider voltage and current range in the future and continue to promote energy conservation.
This acquisition brings to Fairchild the proven efficiency of industry-leading bipolar SiC transistor technology, outstanding performance over a wide temperature range, and superior performance beyond MOSFET and JFET technology. Fairchild also used this acquisition to acquire an experienced team of SiC engineers and scientists, as well as a number of SiC patents (source: Electronic Engineering).
Mark Thompson, chairman, president, and chief executive officer of Fairchild Semiconductor, said: "They have the strength to combine SiC technology with Fairchild's existing capabilities in MOSFETs, IGBTs and multi-chip modules, and their global customer base. Continue to be a leader in innovative, high performance power transistor technology."
Dan Kinzer, chief technology officer of Fairchild Semiconductor, said: "The high performance level of SiC technology can greatly improve the power conversion efficiency. It also provides a higher conversion speed, can achieve a smaller terminal system form factor. Silicon carbide technology in the market has It has a certain position, especially in the area of wide band gap, it is suitable for applications requiring voltages above 600V, and demonstrates excellent robustness and reliability."
The advantages of SiC technology over other technologies include:
Low on-state voltage drop at a specific chip size
High current density
High operating temperature
Extremely low thermal resistance
·Only majority carrier conduction, with ultra-fast switching speed
·Usually off operation mode with a current gain range of 100 to provide an easy drive solution
Due to the use of positive temperature coefficient resistance components, they can be easily connected in parallel (Source: Electronic Engineering)
In addition, the impedance of this type of device is very close to the theoretical limit of SiC technology, and successfully demonstrated a 50A switch operation at 800V within a turn-on and turn-off time of 25ns. These devices have parametric stability over long-term full-bias current and current stress conditions.
These high-gain SiC bipolar devices are suitable for high power conversion applications in down-drilling, solar inverters, wind power inverters, electrical and hybrid vehicles, industrial drives, UPS, and light rail traction applications. Yole Development, a market research organization, expects these markets will reach a scale of nearly one billion U.S. dollars by 2020.
The device's industry-leading efficiency can reduce the associated losses of mature silicon technology devices by up to 50%, or up to four times in frequency under the same loss conditions. SiC devices have significantly reduced size, fewer passive components, and can reduce overall system cost and increase value. For devices that require the highest efficiency and power density, this device is the unmatched product of choice (Source: Electronic Engineering).
Fairchild is sampling samples of 1200V initial products with a rated current of up to 50A for target applications, and will develop products with a wider voltage and current range in the future and continue to promote energy conservation.