KIOXIA
Some pages and/or documents may still include the name "Toshiba Corporation" or "Toshiba Memory Corporation", please interpret those names to correspond to the new company name.
To develop products tailored to the market needs using world-leading, cutting-edge technology, KIOXIA Corporation is engaged in the entire development process, encompassing everything from product planning and product design to the development of manufacturing technology and high-efficiency production lines. Each team leverages specialized expertise to facilitate continuous innovation, serving as a driving force to compete in constantly evolving markets.
The design team develops new circuit technologies and creates memory designs in such a manner as to reduce the chip area, ensure reliability, increase operating speed, and reduce power consumption. The design team performs a wide range of tasks from system design, detailed circuit design, and layout to the evaluation and analysis of prototype chips.
Memory development requires a broad spectrum of cutting-edge technologies.
The package development team is responsible for the development of packages for memory devices, which encompasses mechanical design, substrate wiring design, assembly process development, and the evaluation of heat and shock resistance. Packages not only protect semiconductor chips and provide chip-to-board interconnection but also make it possible to increase the capacity and functionality of memory devices through 3D multi-layer chip stacking and controller chip integration.
The device development team designs and evaluates memory devices incorporating cutting-edge processes and production technologies while collaborating with the production team on development tasks. The device development team also develops super-small-geometry and super-high-performance unit processes as well as cutting-edge test and measuring technologies for next-generation memory devices and combines them in an optimal manner to establish process recipes for next-generation and post-next-generation memory devices.
At KIOXIA Corporation, memory devices are manufactured using a collection of the most advanced technologies. Big data are collected from manufacturing and testing equipment and analyzed using machine learning and other AI techniques so as to improve productivity and foster technological innovation. The production team also grasps customers’ applications of our products with the aim of proper quality management.
KIOXIA History
The inventor of flash memory, blazes trails to the future:1987Invention of world's first NAND flash memory
1991World's first mass production of NAND flash memory
1992Yokkaichi Plant established
2007World's first 3D flash memory technology announced
2014World's first 15nm 128Gbit NAND flash memory
2016Mass production of 48-layer BiCS FLASH?
2017Toshiba Memory Corporation established
Mass production of 64-layer BiCS FLASH?
2018Mass production of 96-layer BiCS FLASH?
KIOXIA is product portfolio consists of Memory, On-board eUSF storage, Enterprise Gen 4 PCIe NVMe SSD.
KIOXIA Related Products
TC58BYG1S3HBAI6
IC FLASH 2GBIT PARALLEL 67VFBGA>TC58BVG1S3HTA00
IC FLASH 2GBIT PARALLEL 48TSOP I>TC58BVG1S3HBAI6
IC FLASH 2GBIT PARALLEL 67VFBGA>TC58NVG1S3HBAI6
IC FLASH 2GBIT PARALLEL 67VFBGA>TC58NVG0S3HTAI0
IC FLASH 1GBIT PARALLEL 48TSOP I>TC58NVG0S3HTA00
IC FLASH 1GBIT PARALLEL 48TSOP I>TC58BVG0S3HTAI0
IC FLASH 1GBIT PARALLEL 48TSOP I>TC58NVG0S3HBAI6
IC FLASH 1GBIT PARALLEL 67VFBGA>TC58BVG0S3HBAI6
IC FLASH 1GBIT PARALLEL 67VFBGA>THGBMUG8C2LBAIL
IC FLASH 256GBIT EMMC 153FBGA>THGBMUG8C2LBAIL
IC FLASH 256GBIT EMMC 153FBGA>THGAMVG8T13BAIL
IC FLASH 256GBIT EMMC 153FBGA>THGBMTG5D1LBAIL
IC FLASH 32GBIT EMMC 153WFBGA>TH58NYG2S3HBAI4
IC FLASH 4GBIT PARALLEL 63BGA>TH58BVG2S3HBAI4
IC FLASH 4GBIT 63TFBGA>TH58BYG2S3HBAI4
IC FLASH 4GBIT 63TFBGA>TC58BYG2S0HBAI4
IC FLASH 4G PARALLEL 63TFBGA>TC58BYG2S0HBAI6
IC FLASH 4GBIT PARALLEL 67VFBGA>TC58NYG2S0HBAI6
IC FLASH 4GBIT PARALLEL 67VFBGA>TH58NYG3S0HBAI4
IC FLASH 8GBIT PARALLEL 63TFBGA>
KIOXIA Hot Products
More- TH58NVG3S0HBAI4
- TC58NVG2S0HTA00
- TH58BYG3S0HBAI6
- TH58NVG2S3HTAI0
- TC58BYG0S3HBAI4
- TC58NVG1S3HTAI0
- TC58BYG0S3HBAI6
- TH58BVG2S3HTA00
- TC58NVG1S3HBAI6
- THGBMUG8C2LBAIL
- THGBMUG8C2LBAIL
- THGAMVG8T13BAIL
- THGBMTG5D1LBAIL
- TH58NYG2S3HBAI4
- TH58BVG2S3HBAI4
- TH58BYG2S3HBAI4
- TC58BYG2S0HBAI4
- TC58BYG2S0HBAI6
- TC58NYG2S0HBAI6
- TH58NYG3S0HBAI4